Study of various Refractive indices of Arsenide III-V Ternary Semiconductors

Study of various Refractive indices of Arsenide III-V Ternary Semi conductors V. Rama Murthy & Alla. Srivani Research Scholar Rayalaseema university P.G Department of Physics, T.J.P.S College Guntur-6 A.P India

Abstract: Many formulas have been proposed to estimate the refractive index (n) for III-V Ternary Arsenide semiconductors from the electro negativities of the constituent atoms. The proposed relation has been applied to Arsenide Ternary semi conductors belonging to groups III-V. It has proven advantageous over other estimates in the sense that there are fewer computational studies in the literature involving n and X for Ternary semi conductors. The computed values for the refractive index and Composition are found to be in good agreement with the known ones. A comparison between our present values and the ones in the literature is also done.

Keywords: Refractive index, Electro negativities, Composition, Optical properties, Compound semi conductors.

Introduction: 1)A pure elemental semi conductor such as silicon has uniform properties, with the same band gap and lattice properties. A simple binary semi conductor such as GaAs or InP also has uniform properties. we can get other properties by adding one or two other elements from the same groups of the periodic table to a compound semiconductor. 2)Semiconductors and semiconductor materials are used to fabricate microelectronic devices and opto electronic devices such as transistors, photo detectors and solar cells. 3)Semiconductors and semiconductor materials are useful because their electrical conductivity can be altered with dopants, an applied electric field, or electromagnetic radiation. There are two basic categories of semiconductors and semiconductor materials: electrical semiconductors and compound semiconductors. 4)Gallium arsenide (GaAs) and indium phosphide (InP) are examples of composite semiconductors that contain added materials or dopants. Semiconductor doping, the addition of a very small amount of a foreign substance to a pure semiconductor crystal, provides a semiconductor with an excess of conducting electrons or an excess of conducting holes. The first semiconductors and semiconductor materials produced electrical conduction through contact with a metal wire. 5)There are many applications for semiconductors and semiconductor materials in materials engineering, such as the fabrication of transistors, photo detectors and solar cells. Major semiconductor manufacturers and providers of semiconductors and semiconductor materials include Lattice Semiconductor Corporation, Xilinx, Altera, Actel and Quicklogic. Other semiconductor manufactures are located across the United States and around the world. 6)Materials science: Because of their application in devices like transistorsand lasers, the search for new III-V Ternary semi conductor materials and the improvement of existing materials is an important field of study. 7)Some of Arsenide group has indirect and some have direct band gap. 8)Arsenide group is second most common in use after silicon, commonly used as substrate for other III-V Ternary semi conductors 9)Quantum dots may be formed from a monolayer of InAs on InP or GaAs. 10)AlGaAs with composition close to AlAs is almost transparent to sunlight. It is used in GaAs/AlGaAs solar cells. 11)Arsenide III-V Ternary semiconductors are Well-developed material. Use in infrared technology and Thermo photo voltaics. Do pant content determines charge carrier density. For x=0.015, InGaAs perfectly lattice-matches germanium; can be used in multijunction photovoltaic cells. Used in infrared sensors, avalanche photodiodes, laser diodes, optical fiber communication detectors, and short-wavelength infrared cameras.

Objective: The main objective of this paper is to show Investigation of various Refractive indices of Arsenide III-V Ternary Semi conducting Compounds.

Purpose: The purpose of study is Investigation of various Refractive indices of Arsenide III-V Ternary Semi conductors to represent additivity principle even in very low composition range. In the present work we propose a simple relation for estimating the refractive index from the knowledge of Pauling's electro negativities, for semiconductors belonging to III-V Arsenide semi conductors.

Theoretical impact: 1) Ravindra et al. [9] proposed a linear relation governing the variation of the optical refractive index n with the energy gap Eg 2) Gopal [10] modified the Penn-model [11] for the high frequency dielectric constant of semi conductors to obtain a general formula relating n and Eg. ] 3) Reddy and Anjaneyulu [12] assumed another relation, which avoids the shortcomings of relations (1) and (2). This takes the form n = 3:59 - loge(Eg) 4) Based on the above considerations we assume a linear relation between the energy gap Eg and X in compound semiconductors, which is similar to that proposed by Duffy [17] for the case of alkali halide crystals. Accordingly, equation (6) can be rewritten in the following form n= F/(DX-D)1/4 5) The first approach of this paper is to determine the physical parameters like Refractive index for particular compositions and then to find the physical function describing the dependence of the physical parameters on the alloy Composition (x). 6) The second approach of this paper is to simultaneously fit in the data sets for all available compositions in order to minimize the discrepancies between the calculated and the experimental Data over the entire composition range.

Various Refractive indices of Binary Compounds: CompoundAlNAlPAlAsAlSbGaNGaPGaAsGaSbInNInPInAsInSb known (n)2.22.752.923.192.242.93.33.752.353.13.513.96 present (n)2.22.722.883.192.212.963.273.862.273.163.533.93 Ravindra (n)1.732.222.743.092.072.73.243.582.843.33.863.97 Gopal (n)2.242.492.863.182.42.823.363.842.943.424.364.62 Reddy (n)2.252.492.823.122.412.783.293.82.93.354.615.3

Various Refractive indices of Ternary Compounds: 1) AlxGa1-xAs = AlAs + GaAs CompoundAlxGa1-xAs = AlAs + GaAs x value00.10.150.20.250.30.350.40.450.5 known (n12)3.33.2623.2433.2243.2053.1863.1673.1483.1293.11 present (n12)3.273.2313.21153.1923.17253.1533.13353.1143.09453.075 Ravindra (n12)3.243.193.1653.143.1153.093.0653.043.0152.99 Gopal (n12)3.263.223.23.183.163.143.123.13.083.06 Reddy (n12)3.293.2433.21953.1963.17253.1493.12553.1023.07853.055

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.0913.0723.0533.0343.0152.9962.9772.9582.9392.92 present (n12)3.05553.0363.01652.9972.97752.9582.93852.9192.89952.88 Ravindra (n12)2.9652.942.9152.892.8652.842.8152.792.7652.74 Gopal (n12)3.043.0232.982.962.942.922.92.882.86 Reddy (n12)3.03153.0082.98452.9612.93752.9142.89052.8672.84352.82

2) InxGa1-xAs = InAs + GaAs CompoundInxGa1-xAs = InAs + GaAs x value00.10.150.20.250.30.350.40.450.5 known (n12)3.33.3213.33153.3423.35253.3633.37353.3843.39453.405 present (n12)3.273.2963.3093.3223.3353.3483.3613.3743.3873.4 Ravindra (n12)3.243.3023.3333.3643.3953.4263.4573.4883.5193.55 Gopal (n12)3.363.463.513.563.613.663.713.763.813.86 Reddy (n12)3.293.4223.4883.5543.623.6863.7523.8183.8843.95

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.41553.4263.43653.4473.45753.4683.47853.4893.49953.51 present (n12)3.4133.4263.4393.4523.4653.4783.4913.5043.5173.53 Ravindra (n12)3.5813.6123.6433.6743.7053.7363.7673.7983.8293.86 Gopal (n12)3.913.964.014.064.114.164.214.264.314.36 Reddy (n12)4.0164.0824.1484.2144.284.3464.4124.4784.5444.61

3) AlxIn1-xAs = AlAs + InAs CompoundAlxIn1-xAs = AlAs + InAs x value00.10.150.20.250.30.350.40.450.5 known (n12)3.513.4513.42153.3923.36253.3333.30353.2743.24453.215 present (n12)3.533.4653.43253.43.36753.3353.30253.273.23753.205 Ravindra (n12)3.863.7483.6923.6363.583.5243.4683.4123.3563.3 Gopal (n12)4.364.214.1354.063.9853.913.8353.763.6853.61 Reddy (n12)4.614.4314.34154.2524.16254.0733.98353.8943.80453.715

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.18553.1563.12653.0973.06753.0383.00852.9792.94952.92 present (n12)3.17253.143.10753.0753.04253.012.97752.9452.91252.88 Ravindra (n12)3.2443.1883.1323.0763.022.9642.9082.8522.7962.74 Gopal (n12)3.5353.463.3853.313.2353.163.0853.012.9352.86 Reddy (n12)3.62553.5363.44653.3573.26753.1783.08852.9992.90952.82

4) GaAsxN1-x = GaAs + GaN CompoundGaAsxN1-x = GaAs + GaN x value00.10.150.20.250.30.350.40.450.5 known (n12)2.242.3462.3992.4522.5052.5582.6112.6642.7172.77 present (n12)2.212.3162.3692.4222.4752.5282.5812.6342.6872.74 Ravindra (n12)2.072.1872.24552.3042.36252.4212.47952.5382.59652.655 Gopal (n12)2.42.4962.5442.5922.642.6882.7362.7842.8322.88 Reddy (n12)2.412.4982.5422.5862.632.6742.7182.7622.8062.85

x value0.60.60.650.70.750.80.850.90.951 known (n12)2.8232.8762.9292.9823.0353.0883.1413.1943.2473.3 present (n12)2.7932.8462.8992.9523.0053.0583.1113.1643.2173.27 Ravindra (n12)2.71352.7722.83052.8892.94753.0063.06453.1233.18153.24 Gopal (n12)2.9282.9763.0243.0723.123.1683.2163.2643.3123.36 Reddy (n12)2.8942.9382.9823.0263.073.1143.1583.2023.2463.29

5) GaAsxP1-x = GaAs + GaP CompoundGaAsxP1-x = GaAs + GaP x value00.10.150.20.250.30.350.40.450.5 known (n12)2.92.942.962.9833.023.043.063.083.1 present (n12)2.962.9913.00653.0223.03753.0533.06853.0843.09953.115 Ravindra (n12)2.72.7542.7812.8082.8352.8622.8892.9162.9432.97 Gopal (n12)2.822.8742.9012.9282.9552.9823.0093.0363.0633.09 Reddy (n12)2.782.8312.85652.8822.90752.9332.95852.9843.00953.035

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.123.143.163.183.23.223.243.263.283.3 present (n12)3.13053.1463.16153.1773.19253.2083.22353.2393.25453.27 Ravindra (n12)2.9973.0243.0513.0783.1053.1323.1593.1863.2133.24 Gopal (n12)3.1173.1443.1713.1983.2253.2523.2793.3063.3333.36 Reddy (n12)3.06053.0863.11153.1373.16253.1883.21353.2393.26453.29

6) InAsxSb1-x = InAs + InSb CompoundInAsxSb1-x = InAs + InSb x value00.10.150.20.250.30.350.40.450.5 known (n12)3.963.9153.89253.873.84753.8253.80253.783.75753.735 present (n12)3.933.893.873.853.833.813.793.773.753.73 Ravindra (n12)3.973.9593.95353.9483.94253.9373.93153.9263.92053.915 Gopal (n12)4.624.5944.5814.5684.5554.5424.5294.5164.5034.49 Reddy (n12)5.35.2315.19655.1625.12755.0935.05855.0244.98954.955

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.71253.693.66753.6453.62253.63.57753.5553.53253.51 present (n12)3.713.693.673.653.633.613.593.573.553.53 Ravindra (n12)3.90953.9043.89853.8933.88753.8823.87653.8713.86553.86 Gopal (n12)4.4774.4644.4514.4384.4254.4124.3994.3864.3734.36 Reddy (n12)4.92054.8864.85154.8174.78254.7484.71354.6794.64454.61

7) GaAsxSb1-x = GaAs + GaSb CompoundGaAsxSb1-x = GaAs + GaSb x value00.10.150.20.250.30.350.40.450.5 known (n12)3.753.7053.68253.663.63753.6153.59253.573.54753.525 present (n12)3.863.8013.77153.7423.71253.6833.65353.6243.59453.565 Ravindra (n12)3.583.5463.5293.5123.4953.4783.4613.4443.4273.41 Gopal (n12)3.893.8373.81053.7843.75753.7313.70453.6783.65153.625 Reddy (n12)3.83.7493.72353.6983.67253.6473.62153.5963.57053.545

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.50253.483.45753.4353.41253.393.36753.3453.32253.3 present (n12)3.53553.5063.47653.4473.41753.3883.35853.3293.29953.27 Ravindra (n12)3.3933.3763.3593.3423.3253.3083.2913.2743.2573.24 Gopal (n12)3.59853.5723.54553.5193.49253.4663.43953.4133.38653.36 Reddy (n12)3.51953.4943.46853.4433.41753.3923.36653.3413.31553.29

8) InAsxN1-x = InAs + InN CompoundInAsxN1-x = InAs + InN x value00.10.150.20.250.30.350.40.450.5 known (n12)2.352.4662.5242.5822.642.6982.7562.8142.8722.93 present (n12)2.272.3962.4592.5222.5852.6482.7112.7742.8372.9 Ravindra (n12)2.842.9422.9933.0443.0953.1463.1973.2483.2993.35 Gopal (n12)2.943.0823.1533.2243.2953.3663.4373.5083.5793.65 Reddy (n12)2.93.0713.15653.2423.32753.4133.49853.5843.66953.755

x value0.60.60.650.70.750.80.850.90.951 known (n12)2.9883.0463.1043.1623.223.2783.3363.3943.4523.51 present (n12)2.9633.0263.0893.1523.2153.2783.3413.4043.4673.53 Ravindra (n12)3.4013.4523.5033.5543.6053.6563.7073.7583.8093.86 Gopal (n12)3.7213.7923.8633.9344.0054.0764.1474.2184.2894.36 Reddy (n12)3.84053.9264.01154.0974.18254.2684.35354.4394.52454.61

9) InPxAs1-x = InP + InAs CompoundInPxAs1-x = InP + InAs x value00.10.150.20.250.30.350.40.450.5 known (n12)3.513.4693.44853.4283.40753.3873.36653.3463.32553.305 present (n12)3.533.4933.47453.4563.43753.4193.40053.3823.36353.345 Ravindra (n12)3.863.8043.7763.7483.723.6923.6643.6363.6083.58 Gopal (n12)4.364.2664.2194.1724.1254.0784.0313.9843.9373.89 Reddy (n12)4.614.4844.4214.3584.2954.2324.1694.1064.0433.98

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.28453.2643.24353.2233.20253.1823.16153.1413.12053.1 present (n12)3.32653.3083.28953.2713.25253.2343.21553.1973.17853.16 Ravindra (n12)3.5523.5243.4963.4683.443.4123.3843.3563.3283.3 Gopal (n12)3.8433.7963.7493.7023.6553.6083.5613.5143.4673.42 Reddy (n12)3.9173.8543.7913.7283.6653.6023.5393.4763.4133.35

10) AlAsxSb1-x = AlAs + AlSb CompoundAlAsxSb1-x = AlAs + AlSb x value00.10.150.20.250.30.350.40.450.5 known (n12)3.193.1633.14953.1363.12253.1093.09553.0823.06853.055 present (n12)3.193.1593.14353.1283.11253.0973.08153.0663.05053.035 Ravindra (n12)3.093.0553.03753.023.00252.9852.96752.952.93252.915 Gopal (n12)3.183.1483.1323.1163.13.0843.0683.0523.0363.02 Reddy (n12)3.123.093.0753.063.0453.033.01532.9852.97

x value0.60.60.650.70.750.80.850.90.951 known (n12)3.04153.0283.01453.0012.98752.9742.96052.9472.93352.92 present (n12)3.01953.0042.98852.9732.95752.9422.92652.9112.89552.88 Ravindra (n12)2.89752.882.86252.8452.82752.812.79252.7752.75752.74 Gopal (n12)3.0042.9882.9722.9562.942.9242.9082.8922.8762.86 Reddy (n12)2.9552.942.9252.912.8952.882.8652.852.8352.82

11) AlAsxP1-x = AlAs + AlP CompoundAlAsxP1-x = AlAs + AlP x value00.10.150.20.250.30.350.40.450.5 known (n12)2.752.7672.77552.7842.79252.8012.80952.8182.82652.835 present (n12)2.722.7362.7442.7522.762.7682.7762.7842.7922.8 Ravindra (n12)2.222.2722.2982.3242.352.3762.4022.4282.4542.48 Gopal (n12)2.492.5272.54552.5642.58252.6012.61952.6382.65652.675 Reddy (n12)2.492.5232.53952.5562.57252.5892.60552.6222.63852.655

x value0.60.60.650.70.750.80.850.90.951 known (n12)2.84352.8522.86052.8692.87752.8862.89452.9032.91152.92 present (n12)2.8082.8162.8242.8322.842.8482.8562.8642.8722.88 Ravindra (n12)2.5062.5322.5582.5842.612.6362.6622.6882.7142.74 Gopal (n12)2.69352.7122.73052.7492.76752.7862.80452.8232.84152.86 Reddy (n12)2.67152.6882.70452.7212.73752.7542.77052.7872.80352.82

Variation of various Refractive indices (n12) with composition (x) is given. It has been observed that Refractive indices (n12) increase for compounds (x=0.0-1.0) with the increase of composition.

Future Plans: 1) Current data set to include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion:

This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of Dependence of various Refractive indices in III-V Ternary Semiconductors On Composition. The semiconductors have been carried out because of computational complexities and difficulties associate with disorder in the alloys. Polycrystalline ternary composition materials find application in tunable detectors and in other optoelectronic devices. Our results regarding the Structural properties of the ternary alloys are found to be in reasonable agreement with the experimental data.

SUMMARY: I have reviewed the available information about various Refractive indices of structural parameters for 11 technologically important III-V Semi conductors Ternary Semi conductors.

Acknowledgments. - This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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